data sheet 1 of 9 rev. 02.1, 2016-04-19 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! ptva101k02ev thermally-enhanced high power rf ldmos fet 1000 w, 50 v, 1030 / 1090 mhz description the ptva101k02ev ldmos fet is designed for use in power amplifer applications in the 1030 mhz / 1090 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptva101k02ev package h-36275-4 features ? broadband input matching ? high gain and effciency ? integrated esd protection ? human body model class 2 (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant ? capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 w under modeCs pulse condition, (32s on / 18s off) x 80, ltdf = 6.4%. rf characteristics pulsed rf performance (tested in infneon test fxture) v dd = 50 v, i dq = 0.15 a, p out = 900 w, ? = 1030 mhz, 128 s pulse width, 10% duty cycle characteristic symbol min typ max unit gain g ps 17 18 21 db drain efficiency h d 62 65 % 0 10 20 30 40 50 60 2 6 10 14 18 22 26 30 35 40 45 50 55 60 65 drain efficiency (%) gain (db) p out (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 150 ma, t case = 25 c ? = 1030 mhz 128s, 10% 128s, 1% mode - s a101k02ev_1 - 1 gain efficiency
ptva101k02ev data sheet 2 of 9 rev. 02.1, 2016-04-19 rf characteristics typical rf performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 75 ma per side, input signal (t r = 5 ns, t f = 6.5 ns), t case = 25c, class ab test p 1db p 3db mode of operation ? irl gain eff p out gain eff p out p droop(pulse) t r t f (mhz) (db) (db) (%) (w) (db) (%) (w) db @ 1000 w (ns) (ns) 128 s, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8 128 s, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8 mode-s 1030 20 17.9 54 930 14.9 55 1060 0.45 7 8 (32s on / 18s off)x80, ltdf=6.4% 128 s, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8 128 s, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8 dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1 a v ds = 105 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 150 ma v gs 3 3.35 4 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 1000 w, modeCs) r qjc 0.16 c/w
data sheet 3 of 9 rev. 02.1, 2016-04-19 ptva101k02ev ordering information type and version order code package and description shipping ptva101k02ev v1 r0 ptva101k02evv1r0xtma1 h-36275-4, bolt-down tape & reel, 50pcs ptva101k02ev v1 r250 PTVA101K02EVV1R250xtma1 h-36275-4, bolt-down tape & reel, 250pcs typical rf performance (tested with ltn/ptva101k02ev v1 test fixture, 1030 mhz) 0 10 20 30 40 50 60 2 6 10 14 18 22 26 30 35 40 45 50 55 60 65 drain efficiency (%) gain (db) p out (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 150 ma, t case = 25 c ? = 1030 mhz 128s, 10% 128s, 1% mode - s a101k02ev_1 - 1 gain efficiency 2 6 10 14 18 22 26 20 24 28 32 36 40 44 48 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 150 ma, t case = 25 c ? = 1030 mhz 128s, 10% 128s, 1% mode - s gain a101k02ev_1 - 2
ptva101k02ev data sheet 4 of 9 rev. 02.1, 2016-04-19 0 10 20 30 40 50 60 2 6 10 14 18 22 26 30 35 40 45 50 55 60 65 drain efficiency (%) gain (db) p out (dbm) power sweep, pulsed rf, vdd vs gain&eff v dd = 50 v, i dq = 150 ma, t case = 25 c 128s, 10% d.c, ? = 1030 mhz 30 v 35 v 40 v 45 v 50 v efficiency gain a101k02ev_1 - 5 typical rf performance (tested with ltn/ptva101k02ev e6 test fixture, 1090 mhz) 2 6 10 14 18 22 26 20 24 28 32 36 40 44 48 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 150 ma, t case = 25 c ? = 1090 mhz 128s, 10% 128s, 1% gain a101k02ev_1 - 4 0 10 20 30 40 50 60 70 2 6 10 14 18 22 26 30 30 35 40 45 50 55 60 65 drain efficiency (%) gain (db) p out (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 150 ma, t case = 25 c ? = 1090 mhz 128s, 10% 128s, 1% gain efficiency a101k02ev_1 - 3 typical rf performance (cont.) (tested with ltn/ptva101k02ev v1 test fixture, 1030 mhz)
data sheet 5 of 9 rev. 02.1, 2016-04-19 ptva101k02ev broadband circuit impedance z source z load g d g s d note: measurement on single side. freq [mhz] z source w z load w r jx r jx 1030 2.00 1.51 1.48 0.07 1090 2.35 0.64 1.12 C0.28 each side load pull performance C16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 100 ma max output power max effciency z optimum freq [mhz] p out [dbm] p out [w] eff [%] gain [db] z load [w] p out [dbm] p out [w] eff [%] gain [db] z load [w] p out [dbm] p out [w] eff [%] gain [db] z load [w] z source [w] 960 58.10 645.65 61.90 16.46 1.14 C j0.08 56.00 398.11 72.20 18.68 0.79 + j0.69 57.50 562.34 68.00 17.50 0.91 + j0.33 1.41 C j1.62 1030 57.80 602.56 55.60 16.00 0.91 C j0.08 56.00 398.11 71.00 18.80 0.71 + j0.66 57.10 512.86 65.00 17.50 0.78 + j0.34 1.76 C j2.12 1090 57.90 616.60 61.80 16.95 0.95 + j0.27 56.20 416.87 69.80 18.68 0.83 + j0.90 57.40 549.54 65.70 17.73 0.87 + j0.62 2.34 C j2.39 1150 57.36 544.50 50.52 15.80 1.11 + j0.12 56.90 489.78 65.00 17.63 0.94 + j0.76 57.20 524.81 61.20 17.00 1.01 + j0.48 3.21 C j1.47 1215 57.26 532.11 53.90 15.60 1.20 + j0.01 55.40 346.74 62.30 17.46 0.59 + j0.81 56.70 467.74 58.45 16.60 0.88 + j0.49 2.37 C j0.84 load pull performance
ptva101k02ev data sheet 6 of 9 rev. 02.1, 2016-04-19 reference circuit (ltn/ptva101k02ev v1 test fixture, 1030 mhz) reference circuit assembly diagram (not to scale)* + + ptva101 k 02 ev_in _02 rf_in c102 ptva101 k 02 ev_out_01 1030 mhz ro6006, . 025 ( 62) rf_out c101 c103 c104 c 212 c105 r 201 c108 c107 r 103 r 102 r 101 c106 r 811 r 807 c801 r 801 r 808 c210 r 806 c803 c 804 r 809 r 805 r 810 s 1 s 3 s 2 r 104 r 803 r 804 r 802 r 812 c802 ro6006, . 025 ( 62 ) c203 c208 c 206 r 202 c 202 c201 c 214 s 4 s 5 s 6 c209 c211 c213 c 205 c204 c207 v dd c215 c216 p t v a 1 0 1 k 0 2 e v _ c d _ 0 4 - 1 7 - 2 0 1 3 v dd
data sheet 7 of 9 rev. 02.1, 2016-04-19 ptva101k02ev reference circuit (cont.) dut test fixture part no. pcb frequency (mhz) ptva101k02ev ltn/ptva101k02ev v1 rogers 6006, 0.635 mm [0.025] thick, 2 oz. copper, r = 6.15 1030 mhz ptva101k02ev ltn/ptva101k02ev e4 rogers 6006, 0.635 mm [0.025] thick, 2 oz. copper, r = 6.15 1090 mhz ptva101k02ev ltn/ptva101k02ev e6 rogers 3010, 0.635 mm [0.025] thick, 2 oz. copper, r = 10.2 1090 mhz ptva101k02ev ltn/ptva101k02ev e8 rogers 3010, 0.635 mm [0.025] thick, 2 oz. copper, r = 10.2 1030 mhz reference circuit assembly components information component description suggested manufacturer p/n input c101, c106 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c102, c105, c107, c108 capacitor, 39 pf atc atc100b390kw500xb c103, c104 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c801, c802, c803, c804 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r104, r801, r807 resistor, 10 ohm panasonic electronic components erj-8geyj100v r102, r103 resistor, 100 ohm panasonic electronic components erj-8geyj101v r802, r808 resistor, 6200 ohm panasonic electronic components erj-8geyj623v r803, r809 resistor, 1300 ohm panasonic electronic components erj-3geyj132v r804, r810 resistor, 1200 ohm panasonic electronic components erj-3geyj122v r805, r806, r811, r812 resistor, 2000 ohm panasonic electronic components erj-8geyj202v s1, s4 transistor infneon technologies bcp56 s2, s5 voltage regulator national semiconductor lm7805 s3, s6 potentiometer, 2k ohm bourns inc. 3224w-202ect-nd output c201, c202, c203, c214 capacitor, 39 pf atc atc100b390kw500xb c204, c209 capacitor, 100 f panasonic electronic components eev-hd1v101p c205, c211 capacitor, 22 f cornell dubilier electronics (cde) sek220m100st c206, c210 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c207, c213 capacitor, 100 f cornell dubilier electronics (cde) sk101m100st c208, c212 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c215, c216 capacitor, 6800 f panasonic electronic components eco-s2ap682ea r201, r202 resistor, 5600 ohm panasonic electronic components erj-8geyj562v
ptva101k02ev data sheet 8 of 9 rev. 02.1, 2016-04-19 package outline specifications package h-36275-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower s 35 . 56 [1. 400 ] 4x 11 . 68 [. 460 ] c l d1 g1 d2 2 x 45 x 1. 19 [45 x . 047 ] 10 . 16 [. 400 ] 9. 144 [. 360 ] c l c 2 x 2 . 03 [. 080 ] ref 13. 72 [. 540 ] 16 . 612 0.500 [. 654 . 020 ] 2x r1. 59 [r . 062 ] 3. 23 0. 51 [. 127 . 020 ] 8x r0. 51 +0. 13 - 0. 51 [ r . 020 +. 005 - . 020 ] g2 l c l 41. 15 [1 . 620 ] 31. 242 0. 280 [1. 230 . 011 ] 1. 63 [. 064 ] 2. 13 [. 084 ] sph [ c l c l c l 4. 58 +0. 25 - 0. 13 . 180 +. 010 - . 005 ] h - 36275 - 4 _po _01 _10 - 22 - 2012 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.127 0.051 mm [0.005 0.002 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
edition 2016-04-19 published by infneon technologies ag 81726 munich, germany ? 2012 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of in - fneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international data sheet 9 of 9 rev. 02.1, 2016-04-19 ptva101k02ev v1 revision history: 2016-04-19 data sheet previous version: 2013-04-15, data sheet page subjects (major changes since last revision) 1, 2 added esd rating, updated ordering information
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